The quantum Hall effect is the basis for the realisation of the resistance and impedance units in the International System of units since 2019. This paper describes a cryogenic probe that allows to set graphene Hall devices in quantisation conditions in a helium bath (4.2 K) and magnetic fields up to 6 T, to perform precision measurements in the AC regime with impedance bridges. The probe has a full coaxial wiring, isolated from the probe structure, and holds the device in a TO-8 socket. First, characterization experiments are reported on a GaAs device, showing quantisation at 5.5 T. In the AC regime, multiple-series connections will be employed to minimize the residual error, quantified by electrical modelling of the probe.

Design and development of a coaxial cryogenic probe for precision measurements of the quantum Hall effect in the AC regime / Marzano, Martina; Tran, Ngoc Thanh Mai; D'Elia, Vincenzo; Serazio, Danilo; Enrico, Emanuele; Ortolano, Massimo; Pierz, Klaus; Kucera, Jan; Callegaro, Luca. - In: ACTA IMEKO. - ISSN 2221-870X. - 10:2(2021), p. 24. [10.21014/acta_imeko.v10i2.925]

Design and development of a coaxial cryogenic probe for precision measurements of the quantum Hall effect in the AC regime

Marzano, Martina
;
D'Elia, Vincenzo;Serazio, Danilo;Enrico, Emanuele;Ortolano, Massimo;Callegaro, Luca
2021

Abstract

The quantum Hall effect is the basis for the realisation of the resistance and impedance units in the International System of units since 2019. This paper describes a cryogenic probe that allows to set graphene Hall devices in quantisation conditions in a helium bath (4.2 K) and magnetic fields up to 6 T, to perform precision measurements in the AC regime with impedance bridges. The probe has a full coaxial wiring, isolated from the probe structure, and holds the device in a TO-8 socket. First, characterization experiments are reported on a GaAs device, showing quantisation at 5.5 T. In the AC regime, multiple-series connections will be employed to minimize the residual error, quantified by electrical modelling of the probe.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11696/73322
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