X-ray phase-contrast topography to measure the surface stress and bulk strain in a silicon crystal

The measurement of the Si lattice parameter by X‐ray interferometry assumes the use of strain‐free crystals, which might not be true because of intrinsic stresses due to surface relaxation, reconstruction and oxidation. X‐ray phase‐contrast topography was used to investigate the strain sensitivity to the finishing, annealing and coating of interferometer crystals. The topography capabilities were assessed by measuring the lattice strain due to films of copper deposited on the interferometer mirror crystal. A by‐product has been the measurement of the surface stresses after complete relaxation of the coatings.