We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558nm and of intense bands in the 600-750nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600-670nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.
Fluorine-based color centers in diamond / Ditalia Tchernij, S.; Lühmann, T.; Corte, E.; Sardi, F.; Picollo, F.; Traina, P.; Brajković, M.; Crnjac, A.; Pezzagna, S.; Pastuović, Ž.; Degiovanni, I. P.; Moreva, E.; Aprà, P.; Olivero, P.; Siketić, Z.; Meijer, J.; Genovese, M.; Forneris, J.. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - 10:1(2020), p. 21537. [10.1038/s41598-020-78436-6]
Fluorine-based color centers in diamond
Traina, P.;Degiovanni, I. P.;Moreva, E.;Olivero, P.;Genovese, M.;
2020
Abstract
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558nm and of intense bands in the 600-750nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600-670nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.| File | Dimensione | Formato | |
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