We report the observation of a structurally induced doping compensation mechanism in doped semiconductor nanowires that results from the reduced size geometry. This kind of compensation can significantly affect the electronic transport properties of the doped nanowires. We demonstrate that in a crystalline n-type doped Ge wire, compensated by the acceptor-like localized surface states, strong electron-electron interactions occur. Variable range hopping conduction detected in these nanowires is directly generated from strong interactions, exhibiting an unusual large Coulomb gap in the density of states of wires. Published by AIP Publishing.
Geometrically induced electron-electron interaction in semiconductor nanowires / Pinto, N.; Rezvani, S. J.; Favre, L.; Berbezier, I.; Fretto, MATTEO ANDREA; Boarino, Luca. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 109:12(2016). [10.1063/1.4962893]
Geometrically induced electron-electron interaction in semiconductor nanowires
FRETTO, MATTEO ANDREA;BOARINO, LUCA
2016
Abstract
We report the observation of a structurally induced doping compensation mechanism in doped semiconductor nanowires that results from the reduced size geometry. This kind of compensation can significantly affect the electronic transport properties of the doped nanowires. We demonstrate that in a crystalline n-type doped Ge wire, compensated by the acceptor-like localized surface states, strong electron-electron interactions occur. Variable range hopping conduction detected in these nanowires is directly generated from strong interactions, exhibiting an unusual large Coulomb gap in the density of states of wires. Published by AIP Publishing.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
