The ultra high sensitivity exhibited by Superconducting Quantum Interference Device (SQUIDS) could be the key to explore new field of nanoscience such as the investigation of small cluster of elementary magnetic moments. In this paper, an ultra high sensitive niobium nanoSQUID based on submicron Josephson tunnel junction is presented, It has been fabricated in a vertical configuration by using a threedimensional focused ion beam sculpting technique. In such a configuration, the nanosensor loop (area of 0.25 mu m(2)) is perpendicular to the substrate plane allowing to drastically reduce the spurious effects of the external magnetic field employed to excite the nano-objects under investigation. Main device characteristics have been measured at T=4.2 K by using a low noise readout electronics. Due to high voltage responsivity, the nanosensor has exhibited a spectral density of the magnetic flux noise as low as 1.6 mu Phi(0)/Hz(1/2).
Vertical nano superconducting quantum interference device based on Josepshon tunnel nanojunctions for small spin cluster detection / Granata, C; Vettoliere, A; Fretto, MATTEO ANDREA; DE LEO, Maria; Lacquaniti, Vincenzo. - In: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. - ISSN 0304-8853. - Vol. 384:(2015), pp. 117-121.
Vertical nano superconducting quantum interference device based on Josepshon tunnel nanojunctions for small spin cluster detection
FRETTO, MATTEO ANDREA;DE LEO, MARIA;LACQUANITI, VINCENZO
2015
Abstract
The ultra high sensitivity exhibited by Superconducting Quantum Interference Device (SQUIDS) could be the key to explore new field of nanoscience such as the investigation of small cluster of elementary magnetic moments. In this paper, an ultra high sensitive niobium nanoSQUID based on submicron Josephson tunnel junction is presented, It has been fabricated in a vertical configuration by using a threedimensional focused ion beam sculpting technique. In such a configuration, the nanosensor loop (area of 0.25 mu m(2)) is perpendicular to the substrate plane allowing to drastically reduce the spurious effects of the external magnetic field employed to excite the nano-objects under investigation. Main device characteristics have been measured at T=4.2 K by using a low noise readout electronics. Due to high voltage responsivity, the nanosensor has exhibited a spectral density of the magnetic flux noise as low as 1.6 mu Phi(0)/Hz(1/2).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
