We have demonstrated superconductor-normal metal-insulator-superconductor Nb/Al-AlO(X)/Nb Josephson junctions developed with Al layer thicknesses between 30 and 100 nm, resulting in nonhysteretic current-voltage characteristics for critical current densities between 20 and 60 kA/cm(2). Specific capacitances ranged from 180 to 480 fF/mu m(2), depending on temperature and of barrier deposition conditions. It is shown that the high capacitance seen by the junction depends on the Josephson junction barrier but only to a least extent on the parasitic environment. Although the specific capacitance is unusually high, Stewart-McCumber parameters from 1 to 3, at 4.2 K, optimum for digital single-flux-quantum applications were obtained without external shunting. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3354090]
Electrical parameters of Niobium- Based Overdamped SNIS Josephson Junctions for digital applications / Febvre, F; Bouis, D; DE LEO, Maria; Fretto, MATTEO ANDREA; Sosso, Andrea; Lacquaniti, Vincenzo. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 107:10(2010), pp. 103927-103927-6. [10.1063/1.3354090]
Electrical parameters of Niobium- Based Overdamped SNIS Josephson Junctions for digital applications
DE LEO, MARIA;FRETTO, MATTEO ANDREA;SOSSO, ANDREA;LACQUANITI, VINCENZO
2010
Abstract
We have demonstrated superconductor-normal metal-insulator-superconductor Nb/Al-AlO(X)/Nb Josephson junctions developed with Al layer thicknesses between 30 and 100 nm, resulting in nonhysteretic current-voltage characteristics for critical current densities between 20 and 60 kA/cm(2). Specific capacitances ranged from 180 to 480 fF/mu m(2), depending on temperature and of barrier deposition conditions. It is shown that the high capacitance seen by the junction depends on the Josephson junction barrier but only to a least extent on the parasitic environment. Although the specific capacitance is unusually high, Stewart-McCumber parameters from 1 to 3, at 4.2 K, optimum for digital single-flux-quantum applications were obtained without external shunting. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3354090]I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.