Mesoporous silicon doped with 3.0 x 10(19) B atoms cm(-3) (p(+)-type) is an insulating material which dramatically increases its electrical conductivity when exposed to traces of gaseous NO(2); nitrogen dioxide chemisorption at the surface generates carriers, the population of which is readily evaluated through the intensity of IR absorption.
IR detection of NO(2) using p(+) porous silicon as a high sensitivity sensor / Geobaldo, F; Onida, B; Rivolo, P; Borini, S; Boarino, Luca; Rossi, ANDREA MARIO; Amato, Giampiero; Garrone, E.. - In: CHEMICAL COMMUNICATIONS. - ISSN 1359-7345. - 21(2001), pp. 2196-2197. [10.1039/b106188g]
IR detection of NO(2) using p(+) porous silicon as a high sensitivity sensor
BOARINO, LUCA;ROSSI, ANDREA MARIO;AMATO, GIAMPIERO;
2001
Abstract
Mesoporous silicon doped with 3.0 x 10(19) B atoms cm(-3) (p(+)-type) is an insulating material which dramatically increases its electrical conductivity when exposed to traces of gaseous NO(2); nitrogen dioxide chemisorption at the surface generates carriers, the population of which is readily evaluated through the intensity of IR absorption.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
